RTU Research Information System
Latviešu English

Publikācija: “Black Silicon” Formation by Nd: YAG Laser Radiation

Publication Type Scientific article indexed in ERIH database, in INT1 or INT2 category journals
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language “Black Silicon” Formation by Nd: YAG Laser Radiation
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Artūrs Medvids
Pāvels Onufrijevs
Edvīns Daukšta
Volodymyr Kyslyi
Keywords black silicon, microstructure, laser, black body, solar cells
Abstract The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of micro-cone structure strongly depends on Nd:YAG laser intensity and number of laser pulses. Light is repeatedly reflected between the cones in the way that most of it is absorbed. Si micro-cone structure spectral thermal radiation is close to black body spectral radiance, which makes this structure useful for solar cells application. The micro-chemical analysis performed by SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.
DOI: 10.4028/www.scientific.net/AMR.222.44
Reference Medvids, A., Onufrijevs, P., Daukšta, E., Kyslyi, V. “Black Silicon” Formation by Nd: YAG Laser Radiation. Advanced Materials Research, 2011, Vol.222, pp.44-47. ISSN 1662-8985. Available from: doi:10.4028/www.scientific.net/AMR.222.44
ID 11486