Influence of Laser Annealing on Defect-Related Luminescence of InGaN Epilayers

Journal of Luminescence 2011
Darius Dobrovolskas, Juras Mickevicius, Vida Kazlauskiene, Juozas Miškinis, Edmundas Kuokštis, Gintautas Tamulaitis, Pāvels Onufrijevs, Artūrs Medvids, Jeng-Jie Huang, Chih-Yen Chen, Che-Hao Liao, C.C. Yang

InGaN epilayers exhibiting strongdefect-related sub-band gap emission,which is undesirable in epilayers and quantum well structures designed for light-emitting diodes and laser diodes,have been studied by confocal photoluminescence spectroscopy,Auger electron spectroscopy,and atomic force microscopy. Inhomogeneous spatial distribution of band-edge luminescence intensity and compara- tively homogenous distribution of defect-related emission are demonstrated.It is shown that laser annealing at power densities causing the increase of the temperature at the epilayer surface high enough for indium atoms to move to the surface results in suppression of the defect-related emission.

Keywords
InGaN, Photoluminescence, Defect-related annealing
DOI
10.1016/j.jlumin.2011.03.022
Hyperlink
http://www.sciencedirect.com/science/article/pii/S002223131100130X

Dobrovolskas, D., Mickevicius, J., Kazlauskiene, V., Miškinis, J., Kuokštis, E., Tamulaitis, G., Onufrijevs, P., Medvids, A., Huang, J., Chen, C., Liao, C., Yang, C. Influence of Laser Annealing on Defect-Related Luminescence of InGaN Epilayers. Journal of Luminescence, 2011, Vol.131, Iss.7, pp.1322-1326. ISSN 0022-2313. Available from: doi:10.1016/j.jlumin.2011.03.022

Publication language
English (en)