Experimental results on EB induced structural changes in amorphous Sb40Se60 thin films are briefly presented. Films were prepared at room temperature from the bulk sample of glass by thermal evaporation in vacuum 10−3 Pa onto glass substrates. The substrate was equipped with pre-deposited Ni layer of 100 nm thickness. It was controlled during the process of their evaporation. The amorphous Sb40Se60 thin film (100 nm thickness) was irradiated by electron beam by the method of a point impact and selectively etched.The unirradiated amorphous part is completely dissolved, while the irradiated area could be considered as insoluble. Remaining on the substrate substance has polycrystalline structure. There are a lot of similarities between the surface modification of chalcogenide thin film by its irradiation with EB and the collision of adrop with the free surface of liquid. Both phenomena have similar topography of modified surface development in time. Therefore, this paper summarizes the original study material on interaction between electron beam and amorphous chalcogenide films. There is an interaction result description, as well as an attempt to reveal the mechanism of the changes.