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Publikācija: Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Artūrs Medvids
Roberts Rimša
Pāvels Onufrijevs
Edvīns Daukšta
Gatis Mozoļevskis
Talivaldis Puritis
Keywords p-n junction, i-Ge crystal, laser radiation
Abstract -
Reference Medvids, A., Rimša, R., Onufrijevs, P., Daukšta, E., Mozoļevskis, G., Puritis, T. Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation. In: International Conference on Extended Defects in Semiconductors (EDS-2012): Book of Abstracts, Greece, Thessaloniki, 24-29 June, 2012. Thessaloniki: 2012, pp.139-139.
Full-text
ID 14467