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Publikācija: Bulk and Surface Properties of Nonstoichiometric TiO2-x Ceramic

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Bulk and Surface Properties of Nonstoichiometric TiO2-x Ceramic
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Authors Līga Bērziņa-Cimdiņa
Inga Narkevica
Jurijs Ozoliņš
Jānis Kleperis
Errj Sansonetti
Keywords Titanium dioxide, microstructure, surface properties
Abstract Titanium dioxide (TiO2) is an extremely versatile material, suitable for a variety of technological applications including orthopedic and dental implants, photo-catalysis, dye-sensitised solar cells. TiO2 has been studied extensively in the field of surface science due to the wide range of its applications and the expectation for insights into surface properties on the fundamental level. TiO2 is a semiconductor, but its electrical conductivity can be enhanced by heat-treating the oxide under high vacuum conditions. This process leads to the formation of different crystal lattice defects (oxygen vacancies, Ti3+ or Ti4+ interstitials) and results in a change of titanium-oxygen ratio in TiO2 that can be described by the general formula TiO2-x. Creation of oxygen vacancies at the twofold coordinated birding sites, which results in the conversation of related Ti4+ sites to Ti3+ defects, has been identified as being responsible for the large improvement in hydrophilicity. Because of Ti3+ defects’ responsibility for dissociative adsorption of water onto TiO2 surfaces and due to the hydroxyl groups’ interest in the biological response to implants surface modification, bulk and surface properties of TiO2 ceramic before and after annealing under high vacuum conditions have been investigated.
Reference Bērziņa-Cimdiņa, L., Narkevica, I., Ozoliņš, J., Kleperis, J., Sansonetti, E. Bulk and Surface Properties of Nonstoichiometric TiO2-x Ceramic. In: 21st Annual International Conference on Composites/Nanoengineering (ICCE-21): Proceedings, Spain, Tenerife, 21-27 July, 2013. Tenerife: 2013, pp.1-2.
ID 16501