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Publikācija: Dedicated to the Memory of Prof. M. Sheinkman Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System

Publication Type Scientific article indexed in SCOPUS or WOS database
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Dedicated to the Memory of Prof. M. Sheinkman Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors D. Kropman
S. Dolgov
Pāvels Onufrijevs
Edvīns Daukšta
Keywords Ultrasonic treatment, defect structure, Si-SiO2 system
Abstract The effect of ultrasonic treatment (UST) on the defect structure of the Si-SiO2 system is characterised by means of electron spin resonance (ESR), metallography, MOS capacitance measurements and secondary ion mass spectroscopy (SIMS). A non-monotonous dependence of the defect densities on the ultrasonic wave intensity has been observed. The influence of the UST frequency on the ESR signal intensity of the defect centres depended on the defect's type and structure and may be caused by vibrational energy dissipation which is a function of the defect centre's type. The influence of the UST on the Si-SiO2 interface properties depends on the oxide thickness and crystallographic orientation. The density of point defects and absorbed impurities at the Si-SiO2 interface can be reduced and its electrical parameters improved by an appropriate choice of UST and oxidation conditions.
DOI: 10.4028/www.scientific.net/SSP.205-206.352
Hyperlink: http://www.scientific.net/SSP.205-206.352 
Reference Kropman, D., Dolgov, S., Onufrijevs, P., Daukšta, E. Dedicated to the Memory of Prof. M. Sheinkman Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System. Solid State Phenomena , 2014, Vols.205-206, pp.352-357. ISSN 1662-9779. Available from: doi:10.4028/www.scientific.net/SSP.205-206.352
Additional information Citation count:
  • Scopus  0
ID 19462