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Publikācija: Phase Transition in SnS-based Compounds by Pulsed Laser Radiation

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Phase Transition in SnS-based Compounds by Pulsed Laser Radiation
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Authors Pāvels Onufrijevs
Andrii Voznyi
Volodymyr Kosyak
Anatoliy Opanasyuk
Artūrs Medvids
Līga Grase
Gundars Mežinskis
Keywords SnS-based thin films, phase transition, laser radiation, closed space sublimation
Abstract The present research is focused on the elaboration of laser technology for phase transition in Sn-S binary system in order to form n-SnS2/p-SnS heterojunction. With this purpose, the SnS2 films deposited on ITO coated glass substrates by close spaced sublimation method were irradiated by the Nd:YAG laser. The analysis of the samples by Raman spectroscopy shows phase transition of near-surface layer from SnS2 to SnS after irradiation. Moreover, the electrical study of irradiated samples reveals diode behavior of the current-voltage characteristic of Al/sample/ITO sandwich structure which was explained by formation of heterojunction.
Hyperlink: http://iac.icsu.shizuoka.ac.jp/en/conference/ia2015/ 
Reference Onufrijevs, P., Voznyi, A., Kosyak, V., Opanasyuk, A., Medvids, A., Grase, L., Mežinskis, G. Phase Transition in SnS-based Compounds by Pulsed Laser Radiation. In: The 14th International Conference on Global Research and Education "Inter-Academia 2015": Abstracts Book, Japan, Hamamatsu, 28-30 September, 2015. Shizuoka: Shizuoka University, 2015, pp.216-217.
ID 20959