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Publikācija: Structural Properties and Chemical Composition of SnS2 Thin Films

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Structural Properties and Chemical Composition of SnS2 Thin Films
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Authors Līga Grase
Andrii Voznyi
Volodymyr Kosyak
Artūrs Medvids
Gundars Mežinskis
Keywords tin disulfide, thin films, chemical composition
Abstract Due to optimal band gap (2.2 eV), high free carrier mobility tin disulfide (SnS2) thin films are considered as a promising material for application in microelectronic devices. For example, n-type SnS2 could be used as solar cells window layer instead of conventional CdS thin films. Also, a specific two-dimensional 2D structure of the SnS2 crystallites makes it possible to use this material in next generation electronics. Other important advantages of SnS related compounds are their low-cost, earth abundance and non-toxicity.
Reference Grase, L., Voznyi, A., Kosyak, V., Medvids, A., Mežinskis, G. Structural Properties and Chemical Composition of SnS2 Thin Films. In: Abstracts of the Riga Technical University 56th International Scientific Conference : Section: Materials Science and Applied Chemistry, Latvia, Riga, 14-16 October, 2015. Riga: RTU Press, 2015, pp.27-27. ISBN 978-9934-10-733-7.
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