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Publikācija: Influence of Accelerated Electrons and Gamma Radiation on Dielectric Layer of SiO2-Si3N4-SiO2 Capacitor

Publication Type Full-text conference paper published in other conference proceedings
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Influence of Accelerated Electrons and Gamma Radiation on Dielectric Layer of SiO2-Si3N4-SiO2 Capacitor
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Līga Avotiņa
Marina Romanova
Roberts Zarins
Arturs Zarins
Davis Conka
Inna Gavrilkina
Aleksandrs Zaslavskis
Gunta Ķizāne
Jurijs Dehtjars
Keywords ionizing radiation, capacitor, silicon nitride, silicon oxide
Abstract The influence of relatively low absorbed dose of 3 kGy of accelerated electrons and gamma radiation on surface topography and chemical bonds of the dielectric layer of SiO2-Si3N4-SiO2 capacitors has been studied. The samples have been analyzed using atomic force microscopy (AFM), attenuated total reflection Fourier transformation infrared spectroscopy (ATR-FTIR) and X-ray diffractometry (XRD).
Hyperlink: https://conferences.rtu.lv/index.php/MSAC/MSAC2016/paper/viewFile/34/18 
Reference Avotiņa, L., Romanova, M., Zarins, R., Zarins, A., Conka, D., Gavrilkina, I., Zaslavskis, A., Ķizāne, G., Dehtjars, J. Influence of Accelerated Electrons and Gamma Radiation on Dielectric Layer of SiO2-Si3N4-SiO2 Capacitor. In: Riga Technical University 57th International Scientific Conference "Materials Science and Applied Chemistry" (MSAC 2016): Proceedings and Programme, Latvia, Riga, 21-21 October, 2016. Riga: RTU Press, 2016, pp.26-30. ISBN 978-9934-10-861-7.
ID 22909