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Publikācija: Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate

Publication Type Conference paper
Funding for basic activity EU Structural Funds
Defending: ,
Publication language English (en)
Title in original language Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Marina Romanova
Līga Avotiņa
Roberts Zariņš
Artūrs Zariņš
Juris Bitenieks
Antons Vilimans
Aleksandrs Zaslavskis
Gunta Ķizāne
Jurijs Dehtjars
Keywords silicon nitride, nanocapacitor, dielectric
Abstract In this research single-layered and multilayered Si3N4 with the total thickness of 100nm was studied. Si3N4 was fabricated on silicon wafer substrate using low pressure chemical vapor deposition process (LPCVD). Morphology of the samples was studied by scanning electron and atomic force microscopy. Chemical bonds of the samples were analyzed using Fourier transform infrared spectroscopy. Dielectric properties of Si3N4 were measured using dielectric spectroscopy. Hidden electrically active centers of Si3N4 were studied by thermoelectron emission spectroscopy.
Reference Romanova, M., Avotiņa, L., Zariņš, R., Zariņš, A., Bitenieks, J., Vilimans, A., Zaslavskis, A., Ķizāne, G., Dehtjars, J. Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate. In: 3rd International Conference “Innovative Materials, Structures and Technologies” (IMST2017): Book of Abstracts, Latvia, Riga, 27-29 September, 2017. Riga: 2017, pp.137-137.
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