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Publikācija: Silicon Nitride Multi Nanolayer System Fabricated in One Reactor

Publication Type Full-text conference paper published in other conference proceedings
Funding for basic activity Research project
Defending: ,
Publication language English (en)
Title in original language Silicon Nitride Multi Nanolayer System Fabricated in One Reactor
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Liga Avotina
Jurijs Dehtjars
Marina Romanova
Evgeny Shulzinger
Ben Schmidt
Aleksandrs Viļķens
Aleksandr Zaslavski
Gennady Enichek
Keywords electron emission, optical absorption, silicon nitride, nanolayer, nanocapacitor, capacitance
Abstract The silicon nitride nanomultilayer structure (5 layers, thickness of each around 12 nm) was fabricated in one reactor. The structure had less oxygen concentration against the monolayer one with the same thickness. The oxygen and its originated centers were identified by XPS, prethershold photoelectron emission spectroscopy and FTIR measurements. Electrically active centers related to the presence oxygen decreased electrical capacitance of the nanocapacitors with silicon nitride dielectric nanolayers.
Reference Avotina, L., Dehtjars, J., Romanova, M., Shulzinger, E., Schmidt, B., Viļķens, A., Zaslavski, A., Enichek, G. Silicon Nitride Multi Nanolayer System Fabricated in One Reactor. In: Proceedings of the 6th International Conference "Telecommunications, Electronics and Informatics (ICTEI 2018)", Moldova, Chisinau, 24-27 May, 2018. Chisinau: 2018, pp.29-32.
ID 27456