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Publikācija: Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons

Publication Type Conference paper
Funding for basic activity Research project
Defending: ,
Publication language English (en)
Title in original language Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Authors Līga Avotiņa
Elina Pajuste
Marina Romanova
Aleksandrs Zaslavskis
Gennady Enichek
Valentina Kinerte
Jurijs Dehtjars
Gunta Ķizāne
Keywords silicon nitride, ionizing radiation, electron radiation, dielectric, nanocapacitor
Abstract Silicon nitride (Si3N4) is a perspective material for application in nanocapacitors due to combination of its high dielectric constant and mechanical strength. It is proposed to use Si3N4 dielectric layers in devices designed for operation in harsh conditions, such as ionizing radiation. However, ionizing radiation can influence chemical bonds in Si3N4 nano-layers. To estimate stability of the capacitors, it is necessary to study influence of radiation on the chemical bonds of Si3N4 dielectric. Si3N4 nanolayers were exposed to accelerated electrons (5 MeV). Analysis of chemical bonds was performed using attenuated total reflection Fourier transform infrared spectroscopy (ATR FTIR).
Reference Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Dehtjars, J., Ķizāne, G. Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons. In: RACIRI 2018 Summer School: Participants' Abstracts, Germany, Rügen, 25 Aug-1 Sep., 2018. Rügen: 2018, pp.4-4.
Full-text
ID 27689