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Publikācija: FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings

Publication Type Scientific article indexed in SCOPUS or WOS database
Funding for basic activity Research project
Defending: ,
Publication language English (en)
Title in original language FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Authors Līga Avotiņa
Elina Pajuste
Marina Romanova
Aleksandrs Zaslavskis
Gennady Enichek
Valentina Kinerte
Artūrs Zariņš
Bronislavs Lescinskis
Jurijs Dehtjars
Gunta Ķizāne
Keywords silicon nitride, accelerated electrons, infrared spectrometry, dielectric
Abstract Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.
DOI: 10.4028/www.scientific.net/KEM.788.96
Hyperlink: https://www.scientific.net/KEM.788.96 
Reference Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Zariņš, A., Lescinskis, B., Dehtjars, J., Ķizāne, G. FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings. Key Engineering Materials, 2018, Vol.788, pp.96-101. ISSN 1013-9826. e-ISSN 1662-9795. Available from: doi:10.4028/www.scientific.net/KEM.788.96
Additional information Citation count:
  • Scopus  0
ID 28320