Permanent Photodoping of Ga Doped ZnO Nanoparticles
16th Zsigmondy Colloquium "Soft Colloids" 2020
Anzelms Zukuls, Andris Šutka, Raivis Eglītis

Oxide semiconductor nanocrystals that exhibit localized surface plasmon resonance absorption in infrared part of the spectra, has attracted scientist attention for preparation of nanocrystal-based devices for information processing, solar energy conversion, or other technologies [1]. The modulation of plasmonic properties allow to achieve better performance of devices based on these oxide semiconductor nanomaterials. Introducing lattice defects in a ZnO nanocrystal structure by donor doping (with Al, Ga, etc.), results in delocalised electron formation in conduction band, that causes plasmonic absorption in infrared part of the spectrum. The concentration of free delocalised electrons in oxide materials could be potentially increased by photodoping under UV light in hole scavenging media. However, delocalised electrons introduced via photodoping are not stable and diminish upon exposure to air or other oxidants.

Ga doped ZnO, nanoparticles

Zukuls, A., Šutka, A., Eglītis, R. Permanent Photodoping of Ga Doped ZnO Nanoparticles. In: 16th Zsigmondy Colloquium "Soft Colloids", Germany, Dusseldorf, 9-11 March, 2020. Dusseldorf: Heinrich-Heine-University, 2020, pp.79-79.

Publication language
English (en)
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