Permanent Photodoping of Plasmonic Gallium-ZnO Nanocrystals
Nanoscale 2020
Anzelms Zukuls, Raivis Eglītis, Tanel Kaambre, Reinis Ignatāns, Krišjānis Šmits, Kristaps Rubenis, Dzintars Začs, Andris Šutka

Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.


DOI
10.1039/d0nr01005g
Hyperlink
https://pubs.rsc.org/en/content/articlelanding/2020/NR/D0NR01005G#!divAbstract

Zukuls, A., Eglītis, R., Kaambre, T., Ignatāns, R., Šmits, K., Rubenis, K., Začs, D., Šutka, A. Permanent Photodoping of Plasmonic Gallium-ZnO Nanocrystals. Nanoscale, 2020, Vol. 12, No. 12, pp.6624-6629. ISSN 2040-3372. Available from: doi:10.1039/d0nr01005g

Publication language
English (en)
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