Previously thermally annealed at low temperature as 450°C PbZr(0,58)Ti(0,42)O(3) (PZT) sol-gel films on Pt(111)Ei/SiO2/Si substrates were treated by C02 laser radiation and their structure have been studied by X-ray diffraction. Basing on experimental data on absorption spectra of PLZT ceramics an idea of local and selective treatment of PZT sol-gel film in the multilayer structure by C02 pulsed laser radiation was formulated. The possibility to obtain perovskite structure PZT film on Si substrate by irradiation with C02 laser was shown experimentally. Growth of perovskite structure ratio at the expenses of pyrochlore shucture.in PZT with an increased dose of laser radiation has been demonstrated.