RTU Research Information System
Latviešu English

Publikācija: Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser Radiation

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser Radiation
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Jānis Barloti
Edvīns Daukšta
D. Grabovskis
Artūrs Medvids
Pāvels Onufrijevs
Artūrs Plūdons
A. Ulyashin
Keywords Nanostructure, Point Defects, Laser Radiation
Abstract Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force mi-croscopy (AFM) and Raman back-scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated sur-face forms nanocavities.
Reference Barloti, J., Daukšta, E., Grabovskis, D., Medvids, A., Onufrijevs, P., Plūdons, A., Ulyashin, A. Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser Radiation. In: Extended Defects in Semiconductors: Program and Abstracts, France, Poitiers , 14-19 September, 2008. Poitiers: Université de Poitiers, 2008, pp.6-6.
Full-text Full-text
ID 4040