Phase field calculations of Sn redistribution in GeSn/Si structure after pulsed laser irradiation

Optics and Laser Technology 2025
Jevgenijs Kaupužs, Pāvels Onufrijevs, Patrik Scajev, Hung Hsiang Cheng, Guo-En Chang, Yoshishige Tsuchiya

An innovative phase field model has been considered to describe the impurity redistribution in a rapid solidification process. This model has been implemented for the description of a complex process in GeSn/Si structure, consisting of the laser heating of solid phase, melting and solidification process. It allowed us to calculate the Sn concentration profile after repeated laser pulses. A significant increase of the Sn concentration near the surface is observed due to the segregation effect accumulated over many laser pulses. The obtained results are in a qualitative agreement with the experimental data for Ge0.96Sn0.04 layer irradiated with nanosecond laser pulses. The differences between these results and those obtained earlier by the molecular beam epitaxy method are discussed.

Keywords
Phase field model, Segregation, Impurity, redistribution, Rapid solidification, Laser heating, GeSn
DOI
10.1016/j.optlastec.2025.113046
Hyperlink
https://www.sciencedirect.com/science/article/pii/S0030399225006371

Kaupužs, J., Onufrijevs, P., Scajev, P., Hsiang Cheng, H., Chang, G., Tsuchiya, Y. Phase field calculations of Sn redistribution in GeSn/Si structure after pulsed laser irradiation. Optics and Laser Technology, 2025, Vol. 189, No. 113046, pp.1-9. Available from: doi:10.1016/j.optlastec.2025.113046

Publication language
English (en)