Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation

11th International Young Scientists Conference (SPO 2010) 2010
Artūrs Medvids

.A new laser method elaborated for a cone like nanostructure formation on a surface of semiconductors is reported. Diameter of the nano-cone is increased gradually from top of cone till a substrate. Such structure has qualitative new properties in comparison with QWs and QDs. For example, nano-cone with gradually changed diameter is gradient band gap structure. Model of the nanostructures growth and optical properties of nano-cones are proposed.

Keywords
radiation, cdznte, GaAs, Si, Ge, SiGe, semiconductor, laser, nanostrusture, nanotechnology

Medvids, A. Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation. In: 11th International Young Scientists Conference (SPO 2010), Ukraine, Kyiv, 21-24 October, 2010. Kyiv: Taras Shevchenko National University of Kyiv, 2010, pp.28-29.

Publication language
English (en)