Modeling of Processes of Change of Component Composition Sige-Material During Pulsed Laser Irradiationmodeling of Processes of Change of Component Composition Sige-Material during Pulsed Laser Irradiation

Вестник Белорусского государственного университета. Сер. 1: Физика. Математика. Информатика 2010
E Панфиленок, И Манак, Artūrs Medvids, Pāvels Onufrijevs

Numerical calculations of processes of semiconductors heating by radiation as well as processes of the SiGe material component composition changing because of their uneven heating have been conducted. A physical model of three-dimensional structures formation on semiconductor surface by laser pulse radiation have been suggested

Keywords
modeling, SiGe, semiconductor
Hyperlink
http://elib.bsu.by/handle/123456789/2140

Панфиленок, E., Манак, И., Medvids, A., Onufrijevs, P. Modeling of Processes of Change of Component Composition Sige-Material During Pulsed Laser Irradiationmodeling of Processes of Change of Component Composition Sige-Material during Pulsed Laser Irradiation. Вестник Белорусского государственного университета. Сер. 1: Физика. Математика. Информатика, 2010, No. 1, pp.67-71. ISSN 0321-0367.

Publication language
Russian (ru)