RTU Research Information System
Latviešu English

Publikācija: Black Silicon Formation by Nd:YAG Laser Radiation

Publication Type Conference paper
Funding for basic activity Unknown
Defending: ,
Publication language English (en)
Title in original language Black Silicon Formation by Nd:YAG Laser Radiation
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Artūrs Medvids
Pāvels Onufrijevs
Edvīns Daukšta
V Kyslyi
Keywords Black silicon, laser radiation
Abstract “Black silicon” is a novel type of material, which can absorb incident sun light by approximately 98 %, generating more current than ordinary Si (60%). Usually “black silicon” consists of needle like spikes. If a light is shone on such a surface, it repeatedly bounces back and forth between the spikes in a way that most of it never comes back out again. Black Si” is an excellent material for solar cells. It absorbs light more effectively, generating hundreds times more current than conventional Si. Besides, this material could also be used to make infrared detectors, a new application for Si. The aim of the study is to elaborate a new controllable method of “black Si” formation on a Si wafer by Nd:YAG laser radiation.
Reference Medvids, A., Onufrijevs, P., Daukšta, E., Kyslyi, V. Black Silicon Formation by Nd:YAG Laser Radiation. In: 9th International Conference on Global Research and Education : Inter Academia 2010 : Digest, Latvia, Riga, 9-12 August, 2010. Riga: RTU Publishing House, 2010, pp.260-261. ISBN 978-9934-10-046-8.
Full-text
ID 9461