Mechanisms of Strong Photoluminescence from Si Nanocrystals

Advanced Materials Research 2011
Talivaldis Puritis, Jevgenijs Kaupužs, Edvīns Daukšta

Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction subband to the first one.

Keywords
Si nanocrystals, porous silicon, photoluminescence, excitation wavelength, radiative transition, Auger recombination, phonon-assisted recombination
DOI
10.4028/www.scientific.net/AMR.222.175
Hyperlink
https://www.scientific.net/AMR.222.175

Puritis, T., Kaupužs, J., Daukšta, E. Mechanisms of Strong Photoluminescence from Si Nanocrystals. Advanced Materials Research, 2011, Vol. 222, pp.175-180. ISSN 1662-8985. Available from: doi:10.4028/www.scientific.net/AMR.222.175

Publication language
English (en)