Semiconducting Properties of Nonstoichiometric TiO2-x Ceramics
Processing and Application of Ceramics 2012
Agnese Pūra, Kristaps Rubenis, Dmitrijs Stepanovs, Līga Bērziņa-Cimdiņa, Jurijs Ozoliņš

Ceramics containing titanium oxides were prepared using extrusion technology and thermal treatment in two stages: sintering at normal atmospheric conditions at 1000 and 1200 °C and annealing in high vacuum conditions at 950 and 1150 °C. Electrical properties such as thermopower and electrical conductivity of cylindrical specimens have been studied at temperature range from the room temperature up to 350 °C. Activation energy of the process has been determined from conductivity curves. Obtained thermopower values are in the range from 68 up to 105 mV at temperature gradient between the hot and cold ends of the samples at 300 °C, while activation energy values are from 0.03 to 1.16 eV.


Keywords
titania, extrusion, microstructure, thermoelectric properties
DOI
10.2298/PAC1202091P
Hyperlink
http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2016%2004.pdf

Pūra, A., Rubenis, K., Stepanovs, D., Bērziņa-Cimdiņa, L., Ozoliņš, J. Semiconducting Properties of Nonstoichiometric TiO2-x Ceramics. Processing and Application of Ceramics, 2012, Vol. 6, No. 2, pp.91-95. ISSN 1820-6131. Available from: doi:10.2298/PAC1202091P

Publication language
English (en)
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