CdZnTe crystal is considered to be an excellent material for many applications. It is used for room temperature x- and γ- ray radiation detectors because of its high stopping power, wide bad-gap ensures high resistivity and good charge carrier transport properties. However, the main limitation of CdZnTe detector performance is presence of point defects, which causes increase of leakage current and decrease both carrier mobility, and lifetime. In this work we study the improvement of CdZnTe detector parameters after irradiation by pulsed λ=1064 nm Nd:YAG laser. Transient current measurement technique is used to study the charge carrier mobility and the carrier lifetime before and after irradiation by the laser. The samples used in the experiments had 3ppm indium doping to reduce the influence of intrinsic defects, such as cadmium vacancies, on electrical properties. As it is known, indium does not fully compensate cadmium vacancies and remain in the interstitial state, moreover, CdZnTe crystal contains high concentration of tellurium inclusions. The additional compensation of cadmium vacancies by interstitial indium is possible to achieve by laser induced temperature gradient field around tellurium inclusions and it leads to decrease of the leakage current in CdZnTe sample. The high temperature gradient around tellurium inclusions arises due to the high absorption of 1064nm laser radiation, in the same time, CdZnTe crystal is transparent for in this wavelength.