Stress Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties

Physica Status Solidi (C): Current Topics in Solid State Physics 2016
Daniel Kropman, Viktor Seeman, Sergei Dolgov, Ivo Heinmaa, Artūrs Medvids

The results of the investigation of stress relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stress relaxation mechanisms depend on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si- SiO2-Si3N4 system the stress relaxation by strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

Keywords
EPR | Interface | SEM | Si-SiO system 2 | Stress relaxation
DOI
10.1002/pssc.201600051

Kropman, D., Seeman, V., Dolgov, S., Heinmaa, I., Medvids, A. Stress Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties. In: Physica Status Solidi (C): Current Topics in Solid State Physics, -, 12-14 December, 2016. -: Wiley, 2016, pp.1-3. ISSN 1862-6351. e-ISSN 1610-1642. Available from: doi:10.1002/pssc.201600051

Publication language
English (en)