Increased Radiation Hardness of CdZnTe, by Laser Radiaton

International Baltic Sea Region Conference "Functional Materials and Nanotechnologies 2010" (FM&NT): Book of Abstracts 2010
Artūrs Medvids, Aleksandrs Mičko, Edvīns Daukšta, E Dieguez, Y Naseka

The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te crystal using laser radiation. Pulsed Nd:YAG laser for this aim was used. Estimation of the crystalline lattice defects before and after irradiation by γ-ray using photoluminescence method in the experiments was applied. Experimental results showed the increase of the radiation hardness of CdZnTe crystal after irradiation by laser at intensity 1.20-1.80 MW/cm2.

Keywords
radiation, cdznte, semiconductor, laser

Medvids, A., Mičko, A., Daukšta, E., Dieguez, E., Naseka, Y. Increased Radiation Hardness of CdZnTe, by Laser Radiaton. In: International Baltic Sea Region Conference "Functional Materials and Nanotechnologies 2010" (FM&NT): Book of Abstracts, Latvia, Rīga, 16-19 March, 2010. Riga: University of Latvia, 2010, pp.133-133.

Publication language
English (en)