Simulation of Synchronous Boost MPPT Converter with GaN Switches for Photovoltaics

2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE): Proceedings of the 2nd Workshop 2014
Pāvels Suskis

The classic boost topology is a good choice for photovoltaics (PV) Maximum Power Point Tracking (MPPT) converters as it has small current ripple on the input. The efficiency is key parameter for PV-sources as it significantly influences solar system total payoff time. As the energy efficiency for classic converters with silicon-based switches is limited by today technology the GaN switches are chosen. The paper contains brief introduction and market research to set the initial tasks for design. The paper contains simulation results on prototype of boost MPPT converter. All the elements being used for model are device models provided by manufacturers. During the research expected efficiency curves are obtained. Design have been modeled with different GaN switch types for better FET choice. The model will be compared to the real prototype in future research.

Atslēgas vārdi
Maximum power point trackers, Photovoltaic systems, DC-DC power converters, GaN
DOI
10.1109/AIEEE.2014.7020322
Hipersaite
http://ieeexplore.ieee.org/document/7020322/

Suskis, P. Simulation of Synchronous Boost MPPT Converter with GaN Switches for Photovoltaics. No: 2014 IEEE 2nd Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE): Proceedings of the 2nd Workshop, Lietuva, Vilnius, 28.-29. novembris, 2014. Piscataway: IEEE, 2014, 40.-43.lpp. ISBN 978-1-4799-7123-7. e-ISBN 978-1-4799-7122-0. Pieejams: doi:10.1109/AIEEE.2014.7020322

Publikācijas valoda
English (en)