Employment of SiC MOSFETs and GaN – Transistors for Micro Arc Oxidation

IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON 2018) 2018
Rodions Saltanovs, Alexander Krainyukov

The paper describes using SiC MOSFETs and GaN transistors for micro arc oxidation (MAO) process. To carry research SiC transistors C3M0065090J and eGaN EPC2034 transistors have been chosen, as these transistors have small size and good frequency properties. Modules of current regulators were created by means of selected transistors using a welding device of one-sided contact micro welding. The experimental installation was set up to investigate modules under various operating conditions and cooling methods. The research results of frequency properties of current regulators are presented using direct liquid cooling by silicone oil. It was established that the efficiency of the current regulators exceeded 0.9, even when switching frequency equals 300 kHz, when eGaN transistors EPC2034 were used in modules.

Atslēgas vārdi
micro-arc oxidation; current regulator; SiC MOSFET; GaN – transistor; liquid cooling
DOI
10.1109/RTUCON.2018.8659865
Hipersaite
https://ieeexplore.ieee.org/document/8659865

Saltanovs, R., Krainyukov, A. Employment of SiC MOSFETs and GaN – Transistors for Micro Arc Oxidation. No: IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON 2018), Latvija, Riga, 12.-14. novembris, 2018. Piscataway: IEEE, 2018, 1.-4.lpp. ISBN 978-1-5386-6904-4. e-ISBN 978-1-5386-6903-7. Pieejams: doi:10.1109/RTUCON.2018.8659865

Publikācijas valoda
English (en)