Application of Calorimetric Technique for Wide Bandgap Transistor Loss Assessment

2020 2nd Global Power, Energy and Communication Conference (GPECOM 2020): Proceedings 2020
Kaspars Kroičs

New wide bandgap (WBG) devices enable higher switching frequency, higher efficiency and higher power density. At a high switching frequency parasitic inductances and capacitances play important role therefore transistor package is small and they are placed close as possible to the capacitor and therefore measurement of current is difficult. In the paper is shown application of calorimetric measurement technique to find out losses into WBG semiconductors. The results of application of calorimetric measurement method are presented. The power losses measured with calorimetric method are compared with an electrical measurements and results show good accuracy.

Atslēgas vārdi
efficiency, loss estimation, power electronics, SiC transistors, wide bandgap transistor
DOI
10.1109/GPECOM49333.2020.9247942
Hipersaite
https://ieeexplore.ieee.org/document/9247942

Kroičs, K. Application of Calorimetric Technique for Wide Bandgap Transistor Loss Assessment. No: 2020 2nd Global Power, Energy and Communication Conference (GPECOM 2020): Proceedings, Turcija, Izmir, 20.-20. oktobris, 2020. Piscataway: IEEE, 2020, 81.-86.lpp. ISBN 978-1-7281-6265-2. e-ISBN 978-1-7281-6264-5. Pieejams: doi:10.1109/GPECOM49333.2020.9247942

Publikācijas valoda
English (en)