Employment of SIC MOSFETS and GaN-Transistors for Wireless Power Transmission Systems

Reliability and Statistics in Transportation and Communication: Selected Papers from the 18th International Conference on Reliability and Statistics in Transportation and Communication, RelStat '18. Lecture Notes in Networks and Systems. Vol.68 2019
Rodions Saltanovs, Aleksander Krainyukov

The paper is focusing on to the research of the possibility of using of SiC MOSFETs and GaN-transistors in wireless power transmission systems. To carry research eGaN EPC2034 transistors and SiC transistors C3M0065090J have been used, since these transistors have good frequency properties and small cases. The power inverter hybrid modules were created with chosen transistors. The frequency properties of modules of power inverters were researched when silicone oil was used for direct liquid cooling by of modules. The efficiency assessments is presented for the created modules.

Atslēgas vārdi
Wireless power transmission; Power inverter; Liquid cooling;
DOI
10.1007/978-3-030-12450-2_28
Hipersaite
https://link.springer.com/chapter/10.1007/978-3-030-12450-2_28

Saltanovs, R., Krainyukov, A. Employment of SIC MOSFETS and GaN-Transistors for Wireless Power Transmission Systems. No: Reliability and Statistics in Transportation and Communication: Selected Papers from the 18th International Conference on Reliability and Statistics in Transportation and Communication, RelStat '18. Lecture Notes in Networks and Systems. Vol.68, Latvija, Riga, 17.-20. oktobris, 2018. Cham: Springer Nature, 2019, 293.-301.lpp. ISBN 978-3-030-12449-6. e-ISBN 978-3-030-12450-2. ISSN 2367-3370. e-ISSN 2367-3389. Pieejams: doi:10.1007/978-3-030-12450-2_28

Publikācijas valoda
English (en)