Photoluminescence of Self-Trapped Excitons in Boron Nitride Nanotubes
Journal of Nanoscience and Nanotechnology 2008
Baiba Bērziņa, D. L. Carroll, V. Korsak, R. Krutohvostov, L. Trinkler, K. B. Ucer, R. T. Williams

The excitation energy dependence and temperature dependence of photoluminescence from boron nitride nanotubes and hexagonal BN powder samples are reported. The results are discussed within a model attributing the broad 3.2 eV luminescence from these samples to self-trapped excitons in the low-dimensional structures of BN nanotubes and of nano-arch surface reconstructions on h-BN sheet edge faces in powder. An empirical model accounting for the unusual combination of excitation and temperature dependence of photoluminescence seen in these measurements is suggested. For the model to be consistent with the hypothesis of self-trapped excitons on BN nanotubes, it may be necessary to show that the cores of multiwall nanotubes are selectively probed by light tuned below the h-BN exciton.


Atslēgas vārdi
Boron Nitride Nanotubes, Self-Trapped Excitons
Hipersaite
http://www.ncbi.nlm.nih.gov/pubmed/19205230

Bērziņa, B., Carroll, D., Korsak, V., Krutohvostov, R., Trinkler, L., Ucer, K., Williams, R. Photoluminescence of Self-Trapped Excitons in Boron Nitride Nanotubes. Journal of Nanoscience and Nanotechnology, 2008, No.8, 1.-5.lpp. ISSN 1533-4880. e-ISSN 1533-4899.

Publikācijas valoda
English (en)
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