Silicon Nitride Multi Nanolayer System Fabricated in One Reactor
Proceedings of the 6th International Conference "Telecommunications, Electronics and Informatics (ICTEI 2018)" 2018
Liga Avotina, Jurijs Dehtjars, Marina Romanova, Evgeny Shulzinger, Ben Schmidt, Aleksandrs Viļķens, Aleksandr Zaslavski, Gennady Enichek

The silicon nitride nanomultilayer structure (5 layers, thickness of each around 12 nm) was fabricated in one reactor. The structure had less oxygen concentration against the monolayer one with the same thickness. The oxygen and its originated centers were identified by XPS, prethershold photoelectron emission spectroscopy and FTIR measurements. Electrically active centers related to the presence oxygen decreased electrical capacitance of the nanocapacitors with silicon nitride dielectric nanolayers.


Keywords
electron emission, optical absorption, silicon nitride, nanolayer, nanocapacitor, capacitance

Avotina, L., Dehtjars, J., Romanova, M., Shulzinger, E., Schmidt, B., Viļķens, A., Zaslavski, A., Enichek, G. Silicon Nitride Multi Nanolayer System Fabricated in One Reactor. In: Proceedings of the 6th International Conference "Telecommunications, Electronics and Informatics (ICTEI 2018)", Moldova, Chisinau, 24-27 May, 2018. Chisinau: 2018, pp.29-32.

Publication language
English (en)
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