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Publikācija: “Black Silicon” Formation by Nd: YAG Laser Radiation

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Nosaukums oriģinālvalodā “Black Silicon” Formation by Nd: YAG Laser Radiation
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Pētniecības platforma Neviena
Autori Artūrs Medvids
Pāvels Onufrijevs
Edvīns Daukšta
Volodymyr Kyslyi
Atslēgas vārdi black silicon, microstructure, laser, black body, solar cells
Anotācija The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of micro-cone structure strongly depends on Nd:YAG laser intensity and number of laser pulses. Light is repeatedly reflected between the cones in the way that most of it is absorbed. Si micro-cone structure spectral thermal radiation is close to black body spectral radiance, which makes this structure useful for solar cells application. The micro-chemical analysis performed by SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.
DOI: 10.4028/www.scientific.net/AMR.222.44
Hipersaite: https://www.scientific.net/AMR.222.44 
Atsauce Medvids, A., Onufrijevs, P., Daukšta, E., Kyslyi, V. “Black Silicon” Formation by Nd: YAG Laser Radiation. Advanced Materials Research, 2011, Vol. 222, 44.-47.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.222.44
Papildinformācija Citējamību skaits:
ID 11486