Suppression of Defect-Related Luminescence in Laserannealed InGaN Epilayers
Physica Status Solidi C
2012
Gintautas Tamulaitis,
J. Mickevičius,
Darius Dobrovolskas,
Vida Kazlauskiene,
J. Miškinis,
Artūrs Medvids,
E. Kuokštis,
Pāvels Onufrijevs,
J.-J. Huang,
C.-Y. Chen,
C.-H. Liao,
C.C. Yang
An In 0.21Ga 0.79N epilayer has been studied by using spatially-resolved photoluminescence spectroscopy and Auger electron spectroscopy. The photoluminescence intensity is shown to be distributed highly inhomogeneously, while the epilayer also exhibits strong defect-related emission. It is shown that laser annealing at high enough power densities causes redistribution of indium atoms and results in suppression of the defect-related emission. ? 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Atslēgas vārdi
Laser annealing, InGaN, luminescence, defects
DOI
10.1002/pssc.201100169
Tamulaitis, G., Mickevičius, J., Dobrovolskas, D., Kazlauskiene, V., Miškinis, J., Medvids, A., Kuokštis, E., Onufrijevs, P., Huang, J., Chen, C., Liao, C., Yang, C. Suppression of Defect-Related Luminescence in Laserannealed InGaN Epilayers. Physica Status Solidi C, 2012, Vol.9, No.3-4, 1021.-1023.lpp. ISSN 1610-1642. Pieejams: doi:10.1002/pssc.201100169
Publikācijas valoda
English (en)