Suppression of Defect-Related Luminescence in Laserannealed InGaN Epilayers
Physica Status Solidi C 2012
Gintautas Tamulaitis, J. Mickevičius, Darius Dobrovolskas, Vida Kazlauskiene, J. Miškinis, Artūrs Medvids, E. Kuokštis, Pāvels Onufrijevs, J.-J. Huang, C.-Y. Chen, C.-H. Liao, C.C. Yang

An In 0.21Ga 0.79N epilayer has been studied by using spatially-resolved photoluminescence spectroscopy and Auger electron spectroscopy. The photoluminescence intensity is shown to be distributed highly inhomogeneously, while the epilayer also exhibits strong defect-related emission. It is shown that laser annealing at high enough power densities causes redistribution of indium atoms and results in suppression of the defect-related emission. ? 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Atslēgas vārdi
Laser annealing, InGaN, luminescence, defects
DOI
10.1002/pssc.201100169

Tamulaitis, G., Mickevičius, J., Dobrovolskas, D., Kazlauskiene, V., Miškinis, J., Medvids, A., Kuokštis, E., Onufrijevs, P., Huang, J., Chen, C., Liao, C., Yang, C. Suppression of Defect-Related Luminescence in Laserannealed InGaN Epilayers. Physica Status Solidi C, 2012, Vol.9, No.3-4, 1021.-1023.lpp. ISSN 1610-1642. Pieejams: doi:10.1002/pssc.201100169

Publikācijas valoda
English (en)
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