Two-Stage Model of Nanocones Formation on a Surface of Elementary Semiconductors and Their Solid Solutions
The 6th International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies (MPA 2012): Abstracts Book 2012
Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta, Gatis Mozoļevskis

A new elaborated laser method for nanocones formation in elementary semiconductors Si and Ge and their solid solutions is reported. A cone possesses unique properties: a small cone is a quantum dot and a long one is a quantum wire with the gradually decreasing diameter from the base till the top of the cone. Everywhere radius of cone is equal or less than Bohr’ radius of electron, exciton or phonon Quantum confinement effect (QCE) takes place. Properties of nanocones using AFM, SEM, photoluminescence (PL) and Raman spectroscopy were studied. Unique visible PL from the surfaces with nanocones was found and is explained by QCE. A “red” shift of Raman spectra in Ge is a good evidence of this suggestion. Asymmetry of PL spectra of the irradiated SiO2/Si structure is explained by formation graded band gap structure due to QCE in nanocones-nanowires with a graded decrease of diameter toward the top of nanocone. Two-stage model of nanocones formation is proposed [1]: Laser Redistribution of Atoms and Selective Laser Annealing. The first stage is characterized by formation of heterostructures such as Ge/Si due to drift of Ge atoms toward the irradiated surface of the sample in the gradient of temperature, the so-called thermogradient effect [2]. New Ge phase is formed at the end of the process. Ge atoms are localized at the surface of Si like a thin film. The second stage is characterized by formation of nanocones on the irradiated surface of a semiconductor by selective laser heating of the top layer with following mechanical plastic deformation of the layer as a result of relaxation of the mechanical compressive stress arising between these layers due to mismatch of their crystal lattices and selective laser heating. It occurs due to higher absorption of the LR by the top layer than the buried layer. For the first time the possibility of graded band gap 1D structure formation in elementary semiconductors was shown. [1] A. Medvid’. Defects Diffusion Forum, 210, 89 (2002). [2] A.Medvids, P.Onufrijevs, A.Mychko, Nanoscale Research Letters, 6, 582 (2011).


Atslēgas vārdi
Nanocones Formation, Elementary Semiconductors, solid solutions

Medvids, A., Onufrijevs, P., Daukšta, E., Mozoļevskis, G. Two-Stage Model of Nanocones Formation on a Surface of Elementary Semiconductors and Their Solid Solutions. No: The 6th International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies (MPA 2012): Abstracts Book, Portugāle, Alvor, 2.-4. jūlijs, 2012. Alvor: 2012, 6.-6.lpp.

Publikācijas valoda
English (en)
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