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Publikācija: Two-Stage Mechanism of Nanocones Formation by Laser Radiation on a Surface of Elementary Semiconductors

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Nosaukums oriģinālvalodā Two-Stage Mechanism of Nanocones Formation by Laser Radiation on a Surface of Elementary Semiconductors
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori Artūrs Medvids
Pāvels Onufrijevs
Gatis Mozoļevskis
Roberts Rimša
Edvīns Daukšta
Atslēgas vārdi Laser, semiconductor
Anotācija : Investigation of the mechanism of nanocones formation on the irradiated surface of Si and Ge has shown that this process is characterized by two stages – Laser Redistribution of Intrinsic Defects and Selective Laser Annealing. At the first stage of the process, formation of homojunction structure in crystal takes place due to generation and redistribution of intrinsic point defects in temperature gradient field, which causes strongly absorbed laser radiation. At the second stage, formation of nanocones on the irradiated surface of a semiconductor due to mechanical plastic deformation of the top layer enriched by interstitials and relaxation of the mechanical compressive stress arising between top layer and buried layer enriched by vacancies takes place. In experiments i-Ge single crystals with Na = 7.4 × 10^11 cm-3, Nd = 6.8 × 10^11 cm-3, where Na and Nd are acceptors’ and donors’ concentration, and p-Si(B) were used. Different intensities and wavelength of nanosecond Nd:YAG laser with pulse duration were used to irradiate the samples. The evidences of these stages will be presented by experimental investigation on p-Si and i-Ge crystals irradiated by Nd:YAG laser radiation using following methods: microhardness, photoluminescence, Raman back scattering atomic force microscopy and Current-Voltage characteristics.
Atsauce Medvids, A., Onufrijevs, P., Mozoļevskis, G., Rimša, R., Daukšta, E. Two-Stage Mechanism of Nanocones Formation by Laser Radiation on a Surface of Elementary Semiconductors. No: E-MRS Spring 2012 - Symposium V, Francija, Strasbourg, 15.-17. maijs, 2012. Strasbourg: 2012, 18.-18.lpp.
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