Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Solid State Phenomena 2014
N. Sobolev, P. Aruev, A. Kalydin, E. Shek, V. Sabrodskiy, A. Loshachenko, K. Shel’makh, V. Volodin, Artūrs Medvids, L. Xiang, D. Yang

Structural defects induced by electron irradiation of n-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined and the optimal annealing conditions were found. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.

Atslēgas vārdi
Light-Emitting Diodes, Dislocation
DOI
10.4028/www.scientific.net/SSP.205-206.305
Hipersaite
http://www.scientific.net/SSP.205-206.305

Sobolev, N., Aruev, P., Kalydin, A., Shek, E., Sabrodskiy, V., Loshachenko, A., Shel’makh, K., Volodin, V., Medvids, A., Xiang, L., Yang, D. Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon. Solid State Phenomena, 2014, Vol.205-206, 305.-310.lpp. ISSN 1662-9779. Pieejams: doi:10.4028/www.scientific.net/SSP.205-206.305

Publikācijas valoda
English (en)