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Publikācija: Optimized Deposition of Graphene Oxide Langmuir-Blodgett Thin Films

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Nosaukums oriģinālvalodā Optimized Deposition of Graphene Oxide Langmuir-Blodgett Thin Films
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.4. Ķīmija
Autori A. Dravniece
K. Kundziņš
A. Gerca
Kristīne Teivena
Valdis Kampars
M. Rutkis
Atslēgas vārdi single sheet graphene; graphene oxide; Langmuir - Blodgett (LB) technology
Anotācija Single sheet graphene (SG) is an innovative transparent material with high electrical and thermal conduction the use of which in transparent electrodes instead of traditional materials improves the performance of optoelectronic devices. In this study, graphene oxide (GO) has been obtained by a modified Hummer`s method followed by an advanced technique of water removal (lyophilisation). The Langmuir-Blodgett (LB) method was applied to transfer GO from suspension to substrate. To optimize the deposition process, as suspending and spreading solvents the benzene and benzene/methanol mixtures were chosen instead of previously studied water suspensions. The number of GO layers in suspension is reduced by exfoliation in order to obtain a single GO monolayer. For this purpose, sonication and centrifugation of GO sheets are carried out. Finally, the effect of variously treated glass substrate surfaces on the deposition efficiency has been studied. In the work, it is shown that ozonization of glass substrate improves the deposition outcome, while ozonization of indium tin oxide (ITO) glass substrate is necessary to perform such deposition. The obtained GO suspensions and LB thin films have been studied using a scanning electron microscope (SEM)
DOI: 10.2478/lpts-2014-0025
Hipersaite: http://www.degruyter.com/view/j/lpts.2014.51.issue-4/lpts-2014-0025/lpts-2014-0025.xml 
Atsauce Dravniece, A., Kundziņš, K., Gerca, A., Teivena, K., Kampars, V., Rutkis, M. Optimized Deposition of Graphene Oxide Langmuir-Blodgett Thin Films. Latvian Journal of Physics and Technical Sciences, 2014, Vol.51, Iss.4, 61.-68.lpp. ISSN 0868-8257. Pieejams: doi:10.2478/lpts-2014-0025
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