Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation

Advanced Materials Research 2015
Artūrs Medvids, Aleksandrs Mičko, Edvīns Daukšta

In this paper we present a study on the enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG laser radiation. This effect is explained by compensation of cadmium vacancies (VCd) by indium atoms due to a laser-induced temperature gradient around Te inclusions. The temperature gradient is caused by the selective absorption of the laser radiation by the Te inclusions.

Atslēgas vārdi
CdZnTe; Nd:YAG laser; Te inclusions, selective laser absorption
DOI
10.4028/www.scientific.net/AMR.1117.19
Hipersaite
http://www.scientific.net/AMR.1117.19

Medvids, A., Mičko, A., Daukšta, E. Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation. Advanced Materials Research, 2015, Vol. 1117, 19.-22.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.1117.19

Publikācijas valoda
English (en)