Increase of Solar Cell Efficiency in Graded Band Gap Structure

Advanced Materials Research 2015
Jevgenijs Kaupužs, Artūrs Medvids

The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerically based on the drift-diffusion equation and Poisson equation. The calculated efficiency of the CdTe solar cell with p-n junction located in 1μm depth increases remarkably when the band gap of the front n-type layer is graded. The effect is strong for high surface recombination velocity S and is remarkable even at S=0 : the calculated efficiency increases from 19.6% to 24.3%.

Atslēgas vārdi
solar cell, p-n junction, drift-diffusion equation, graded band gap, efficiency
DOI
10.4028/www.scientific.net/AMR.1117.114
Hipersaite
http://www.scientific.net/AMR.1117.114

Kaupužs, J., Medvids, A. Increase of Solar Cell Efficiency in Graded Band Gap Structure. Advanced Materials Research, 2015, Vol. 1117, 114.-117.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.1117.114

Publikācijas valoda
English (en)