By doping CH3NH3PbI3 perovskite by Cl- it is possible to obtain CH3NH3PbI3-xClx with larger grains and so higher charge carrier mobilities and their diffusion lengths enabling better performance of solar cells [1]. Also planar inverse configuration n-i-p is more simply and promises low cost solution manufactured solar cells. Therefore we have investigated ITO/PEDOT:PSS/CH3NH3PbI3-xClx/PCBM/ C60/Ag cell built by modified two-step interdiffusion method [2] from PbI2 and PbCl2 mixture (with molar ratio 3,4) solution in mixture of DMF and DMSO (with molar ratio 3) deposited by spin coating on hole conducting PEDOT:PSS layer. As electron conductor soluble fullerene C60 derivative PCBM was used covered by C60 and Ag electrode by thermal evaporation in vacuum at p~10-6 mbar. Short circuit photocurrent external quantum efficiency (EQE) of such cell is shown in fig. 1 (cell N1). To improve cell performance the PEDOT:PSS layer was dopped with DMSO and also PCBM was dopped by 2,5 mol% of DMOAP [3]. These dopants improved conductivity of charge transport layers and also contact them with perovskite. So much higher EQE values were achieved as seen in fig. 1. for cell N2. Also other photoelectric parameters of the cells have been investigated.