Zinātniskās darbības atbalsta sistēma
Publikācija: Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons
| Publikācijas veids | Raksts konferenču tēžu krājumā |
|---|---|
| Pamatdarbībai piesaistītais finansējums | Pētniecības projekti |
| Aizstāvēšana: | , |
| Publikācijas valoda | English (en) |
| Nosaukums oriģinālvalodā | Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons |
| Pētniecības nozare | 2. Inženierzinātnes un tehnoloģijas |
| Pētniecības apakšnozare | 2.5. Materiālzinātne |
| Autori |
Līga Avotiņa
Elina Pajuste Marina Romanova Aleksandrs Zaslavskis Gennady Enichek Valentina Kinerte Jurijs Dehtjars Gunta Ķizāne |
| Atslēgas vārdi | silicon nitride, ionizing radiation, electron radiation, dielectric, nanocapacitor |
| Anotācija | Silicon nitride (Si3N4) is a perspective material for application in nanocapacitors due to combination of its high dielectric constant and mechanical strength. It is proposed to use Si3N4 dielectric layers in devices designed for operation in harsh conditions, such as ionizing radiation. However, ionizing radiation can influence chemical bonds in Si3N4 nano-layers. To estimate stability of the capacitors, it is necessary to study influence of radiation on the chemical bonds of Si3N4 dielectric. Si3N4 nanolayers were exposed to accelerated electrons (5 MeV). Analysis of chemical bonds was performed using attenuated total reflection Fourier transform infrared spectroscopy (ATR FTIR). |
| Atsauce | Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Dehtjars, J., Ķizāne, G. Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons. No: RACIRI 2018 Summer School: Participants' Abstracts, Vācija, Rügen, 25. Aug-1. Sep., 2018. Rügen: 2018, 4.-4.lpp. |
| Pilnais teksts | |
| ID | 27689 |