Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons

RACIRI 2018 Summer School: Participants' Abstracts 2018
Līga Avotiņa, Elina Pajuste, Marina Romanova, Aleksandrs Zaslavskis, Gennady Enichek, Valentina Kinerte, Jurijs Dehtjars, Gunta Ķizāne

Silicon nitride (Si3N4) is a perspective material for application in nanocapacitors due to combination of its high dielectric constant and mechanical strength. It is proposed to use Si3N4 dielectric layers in devices designed for operation in harsh conditions, such as ionizing radiation. However, ionizing radiation can influence chemical bonds in Si3N4 nano-layers. To estimate stability of the capacitors, it is necessary to study influence of radiation on the chemical bonds of Si3N4 dielectric. Si3N4 nanolayers were exposed to accelerated electrons (5 MeV). Analysis of chemical bonds was performed using attenuated total reflection Fourier transform infrared spectroscopy (ATR FTIR).

Atslēgas vārdi
silicon nitride, ionizing radiation, electron radiation, dielectric, nanocapacitor

Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Dehtjars, J., Ķizāne, G. Modifications of Silicon Nitride Bonds under Action of Accelerated Electrons. No: RACIRI 2018 Summer School: Participants' Abstracts, Vācija, Rügen, 25. Aug-1. Sep., 2018. Rügen: 2018, 4.-4.lpp.

Publikācijas valoda
English (en)