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Publikācija: FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings

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Publikācijas valoda English (en)
Nosaukums oriģinālvalodā FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings
Pētniecības nozare 2. Inženierzinātnes un tehnoloģijas
Pētniecības apakšnozare 2.5. Materiālzinātne
Autori Līga Avotiņa
Elina Pajuste
Marina Romanova
Aleksandrs Zaslavskis
Gennady Enichek
Valentina Kinerte
Artūrs Zariņš
Bronislavs Lescinskis
Jurijs Dehtjars
Gunta Ķizāne
Atslēgas vārdi silicon nitride, accelerated electrons, infrared spectrometry, dielectric
Anotācija Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.
DOI: 10.4028/www.scientific.net/KEM.788.96
Hipersaite: https://www.scientific.net/KEM.788.96 
Atsauce Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Zariņš, A., Lescinskis, B., Dehtjars, J., Ķizāne, G. FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings. Key Engineering Materials, 2018, Vol.788, 96.-101.lpp. ISSN 1013-9826. e-ISSN 1662-9795. Pieejams: doi:10.4028/www.scientific.net/KEM.788.96
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ID 28320