FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings
Key Engineering Materials
2018
Līga Avotiņa,
Elina Pajuste,
Marina Romanova,
Aleksandrs Zaslavskis,
Gennady Enichek,
Valentina Kinerte,
Artūrs Zariņš,
Bronislavs Lescinskis,
Jurijs Dehtjars,
Gunta Ķizāne
Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.
Atslēgas vārdi
silicon nitride, accelerated electrons, infrared spectrometry, dielectric
DOI
10.4028/www.scientific.net/KEM.788.96
Hipersaite
https://www.scientific.net/KEM.788.96
Avotiņa, L., Pajuste, E., Romanova, M., Zaslavskis, A., Enichek, G., Kinerte, V., Zariņš, A., Lescinskis, B., Dehtjars, J., Ķizāne, G. FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings. Key Engineering Materials, 2018, Vol.788, 96.-101.lpp. ISSN 1013-9826. e-ISSN 1662-9795. Pieejams: doi:10.4028/www.scientific.net/KEM.788.96
Publikācijas valoda
English (en)