Phase Transformation from Rutile to Anatase with Oxygen Ion Dose in the TiO2 Layer Formed on a Ti Substrate
Materials Science in Semiconductor Porcessing 2020
Artūrs Medvids, S Varnagiris, Edvīns Letko, D. Milcius, Līga Orlova, Sergejs Gaidukovs, Aleksandrs Mičko, H. Mimura, Artūrs Plūdons, Pāvels Onufrijevs

The oxygen plasma immersion ion implantation (O-PIII) method was used to form a TiO2 layer on a Ti substrate. The content of the anatase polycrystalline phase increased from 5.1% to 22.3% of the total TiO2 amount with a higher Oþion dose. The oxygen ion doses were 3.6 �1016 ions, 8.1 �1016 ions, 1.26 �1017 ions, for 1, 2, and 3 h, respectively, with ion energies of E �0.8 keV. The polycrystalline phases and morphology of the obtained films were characterized by XRD, FESEM, AFM, and Raman spectroscopy. The chemical bond analysis and layer- by-layer measurements for TiO2 layer thickness evaluation were performed by XPS. The photocatalytic decomposition reaction constants of a methylene blue solution increased from 3.2 �103 min1 to 4.2 �103 min1 under UV-A irradiation and the liquid free surface energy increased from 39.0 mJ/m2 to 49.5 mJ/m2 with a higher O-PIII treatment doses. These results were explained by the partial phase transition of the TiO2 layer from rutile to anatase. Thus, the increase in the Oþions implantation dose into the Ti substrate invoked the reduction of material density from Ti (ρ ¼4.506 g/cm3) through TiO2 rutile (4.23 g/cm3) to TiO2 anatase (3.78 g/cm3) phase.

Atslēgas vārdi
Phase transformation, plasma immersion ion implantation, nanomaterials, oxides, titanium compounds

Medvids, A., Varnagiris, S., Letko, E., Milcius, D., Grase, L., Gaidukovs, S., Mičko, A., Mimura, H., Plūdons, A., Onufrijevs, P. Phase Transformation from Rutile to Anatase with Oxygen Ion Dose in the TiO2 Layer Formed on a Ti Substrate. Materials Science in Semiconductor Porcessing, 2020, Vol. 106, 1.-6.lpp. ISSN 1369-8001. Pieejams: doi:10.1016/j.mssp.2019.104776

Publikācijas valoda
English (en)
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