Planar GeSn Photodiode for High-Detectivity Photodetection at 1550nm

Applied Physics Letters 2020
Kuo-Chih Lee, Min-Xiang Lin, Hui Li, Hung-Hsiang Cheng, Greg Sun, Richard Soref, Joshua R. Hendrickson, Kuan-Ming Hung, Patrik Scajev, Artūrs Medvids

We report an investigation of a planar GeSn p-i-n diode for a high-detectivity photodetector based on an undoped GeSn film. By fabricating n- A nd p-type regions on the plane of the GeSn film using the complementary metal-oxide-semiconductor technology of ion implantation, a low dark current density is revealed and attributed to the low defect density of the film and current flow suppression around the diode periphery. This yields a specific 1550-nm detectivity of ∼1010 cm Hz1/2 W-1, an order of magnitude higher than that of conventional vertical GeSn-based diodes and comparable to that of commercially available Ge-based diodes. This work provides an alternative approach for achieving a high-detectivity GeSn photodetector that may facilitate its potential applications.

DOI
10.1063/5.0006711
Hipersaite
https://aip.scitation.org/doi/10.1063/5.0006711

Lee, K., Lin, M., Li, H., Cheng, H., Sun, G., Soref, R., Hendrickson, J., Hung, K., Scajev, P., Medvids, A. Planar GeSn Photodiode for High-Detectivity Photodetection at 1550nm. Applied Physics Letters, 2020, Vol. 117, No. 1, Article number 012102. ISSN 0003-6951. e-ISSN 1077-3118. Pieejams: doi:10.1063/5.0006711

Publikācijas valoda
English (en)