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Publikācija: Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation
| Publikācijas veids | Raksts konferenču tēžu krājumā |
|---|---|
| Pamatdarbībai piesaistītais finansējums | Nav zināms |
| Aizstāvēšana: | , |
| Publikācijas valoda | English (en) |
| Nosaukums oriģinālvalodā | Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation |
| Pētniecības nozare | 1. Dabaszinātnes |
| Pētniecības apakšnozare | 1.3. Fizika un astronomija |
| Autori |
N. Dmitruk
E. Kasper K. Lyutovich Artūrs Medvids M. Oehme Pāvels Onufrijevs I. Pundyk |
| Atslēgas vārdi | NANOHILLS, SiGe, HETEROEPITAXIAL STRUCTURE, LASER |
| Anotācija | For the first time observed self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses (pulse duration 15 ns; wavelength 1062 nm; power 1MW) in the Si0.7Ge0.3/Si heteroepitaxial structures with initially uniform distribution of Ge atoms over the top layer is reported. The Photoluminescence band at 700-800 nm the maximum of which shifting to shorter wavelengths with the increase of the intensity of laser radiation and appearance of the 300 cmֿ¹ Ge-Ge vibration band in micro-Raman spectra are explained by the quantum confinement effect in nanohills. An AFM study of the morphology of irradiated surface has shown formation of particularly-oriented nanohills after laser irradiation of the intensity 32 MW/cm². Ellipsometry data confirmed appearance of Ge-rich phase precipitates amounting to 4.6% and 2.1% of the total Ge content induced by laser radiation of intensities 32 MW/cm² and 25 MW/cm², respectively. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of the laser radiation. |
| Atsauce | Dmitruk, N., Kasper, E., Lyutovich, K., Medvids, A., Oehme, M., Onufrijevs, P., Pundyk, I. Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation. No: 2nd Euro-Asian Pulsed Power Conference, Lietuva, Vilnius, 22.-26. septembris, 2008. Vilnius: 2008, 92.-92.lpp. |
| Pilnais teksts | |
| ID | 4036 |