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Publikācija: Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation

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Publikācijas valoda English (en)
Nosaukums oriģinālvalodā Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori N. Dmitruk
E. Kasper
K. Lyutovich
Artūrs Medvids
M. Oehme
Pāvels Onufrijevs
I. Pundyk
Atslēgas vārdi NANOHILLS, SiGe, HETEROEPITAXIAL STRUCTURE, LASER
Anotācija For the first time observed self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses (pulse duration 15 ns; wavelength 1062 nm; power 1MW) in the Si0.7Ge0.3/Si heteroepitaxial structures with initially uniform distribution of Ge atoms over the top layer is reported. The Photoluminescence band at 700-800 nm the maximum of which shifting to shorter wavelengths with the increase of the intensity of laser radiation and appearance of the 300 cmֿ¹ Ge-Ge vibration band in micro-Raman spectra are explained by the quantum confinement effect in nanohills. An AFM study of the morphology of irradiated surface has shown formation of particularly-oriented nanohills after laser irradiation of the intensity 32 MW/cm². Ellipsometry data confirmed appearance of Ge-rich phase precipitates amounting to 4.6% and 2.1% of the total Ge content induced by laser radiation of intensities 32 MW/cm² and 25 MW/cm², respectively. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of the laser radiation.
Atsauce Dmitruk, N., Kasper, E., Lyutovich, K., Medvids, A., Oehme, M., Onufrijevs, P., Pundyk, I. Formation of Ge Nanohills in SixGe1-x/Si Heteroepitaxial Structure by Pulsed Powerful Laser Radiation. No: 2nd Euro-Asian Pulsed Power Conference, Lietuva, Vilnius, 22.-26. septembris, 2008. Vilnius: 2008, 92.-92.lpp.
Pilnais teksts
ID 4036