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Publikācija: Laser Induced Self-Organization of Nanowires on Sio2/Si Interface

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Nosaukums oriģinālvalodā Laser Induced Self-Organization of Nanowires on Sio2/Si Interface
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori I. Dmitruk
Artūrs Medvids
Pāvels Onufrijevs
I. Pundyk
Atslēgas vārdi SELF-ORGANIZATION, NANOWIRES, SiO2/Si
Anotācija The aim of this work is to study properties of nanostructures formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation (LR). Study of the irradiated surface morphology by AFM has shown formation of a very sharp nanohills on the SiO2/Si interface after irradiation by laser at I> 5MW/cm2. Photoluminescence of the SiO2/Si structure in visible range of spectrum with maximum at 2.05 eV obtained after irradiation by the laser at intensity I =2.0 MW/cm2. PL spectrum is strongly asymmetric with long wing in IR part of spectrum. This particularity is explained by Quantum confinement effect in nanohills/nanowires with gradually decreasing of nanowires diameter from Si substrate till top – graded band gap semiconductor. In our case the maximum of band gap is 2.05 eV which corresponds to the minimal diameter 2.3 nm on the top of nanohills-nanowire. Graded change of band gap in Si arises due to Quantum confinement effect.
Atsauce Dmitruk, I., Medvids, A., Onufrijevs, P., Pundyk, I. Laser Induced Self-Organization of Nanowires on Sio2/Si Interface. No: Workshop on Recent Advances of Low Dimensional Structures and Devices: Workshop Program and Abstract Booklet, Lielbritānija, Nottingham, 7.-9. aprīlis, 2008. Nottingham: University of Nottingham, 2008, 122.-122.lpp.
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