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Publikācija: Nanocrystals Grown on a Surface of Si

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Publikācijas valoda English (en)
Nosaukums oriģinālvalodā Nanocrystals Grown on a Surface of Si, Ge and SiGe/Si Crystals Stimulated by Laser Radiation
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori I. Dmitruk
E. Kasper
K. Lyutovich
Artūrs Medvids
M. Oehme
Pāvels Onufrijevs
I. Pundyk
Atslēgas vārdi Nanocrystals, SiGe/Si, Laser Radiation
Anotācija The aim of this work is to study the mechanism of nanohills growth in SiGe/Si structure by laser radiation. P-type Si (001), i-type Ge crystals and SiGe/Si heteroepitaxial structure were irradiated by nanosecond Nd:YAG laser pulses. Nanocrystals are grown on the irradiated surface of Si, Ge crystals and SiGe/Si heteroepitaxial structure at intensity of the laser radiation up to 2MW/cm2, 20MW/cm2 and 25MW/cm2, respectively. Self-organized structures are observed and characterized. For example, they show a strong photoluminescence in the visible range of spectra with long wing in the red part of spectra which can be explained by quantum confinement effect in nanocrystals-nanowires with graded diameter. An evidence of this effect is the red shift of Ge-Ge phonon line at 300 cm-1 in micro-Raman spectra. Thus we have found a new method for the growth of semiconductor nanocrystals with graded band gap due to quantum confinement using laser radiation of an elementary semiconductor.
Atsauce Dmitruk, I., Kasper, E., Lyutovich, K., Medvids, A., Oehme, M., Onufrijevs, P., Pundyk, I. Nanocrystals Grown on a Surface of Si, Ge and SiGe/Si Crystals Stimulated by Laser Radiation. No: The 4th Asian Conference on Crystal Growth and Crystal Technology: Program Volume, Japāna, Sendai, 21.-24. maijs, 2008. Sendai: The Asian Society for Crystal Growth and Crystal Technology, 2008, 101.-101.lpp.
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