Niobium-Doped Titanium Dioxide: Effect of Conductivity on Metal-Semiconductor Tribovoltaic Devices
Advanced Materials Interfaces 2025
Kaspars Mālnieks, Sabīna Kļimenko, Peter C. Sherrell, Anatolijs Šarakovskis, Raivis Eglītis, Krišjānis Šmits, Artis Linarts, Andris Šutka

Tribovoltaic devices have emerged as promising technologies for converting mechanical motion to electricity via surface charge generation. To maximize the electromechanical conversion of tribovoltaic devices, conventional literature has focussed on engineering a large difference in work functions between the contact materials. However, recent reports suggest that other factors beyond work function, such as temperature, play a key role in electromechanical conversion. Herein, TiO2 (a cheap, abundant oxide material) is doped with Nb5+, resulting in an improved tribovoltaic performance up to 65 times. This is attributed to an enhancement in the TiO2 film conductivity arising from Nb5+ doping. Further, it is shown that this improvement holds over cm2 scale testing. This work demonstrates the importance of considering a range of factors, particularly conductivity, when designing tribovoltaic devices and may be adopted broadly for optimal electromechanical conversion.


Atslēgas vārdi
energy harvesting | metal-semiconductor junction | niobium | titanium dioxide | tribovoltaic
DOI
10.1002/admi.202400567
Hipersaite
https://onlinelibrary.wiley.com/doi/10.1002/admi.202400567

Mālnieks, K., Kļimenko, S., Sherrell, P., Šarakovskis, A., Eglītis, R., Šmits, K., Linarts, A., Šutka, A. Niobium-Doped Titanium Dioxide: Effect of Conductivity on Metal-Semiconductor Tribovoltaic Devices. Advanced Materials Interfaces, 2025, Vol. 12, No. 1, Article number 2400567. ISSN 2196-7350. Pieejams: doi:10.1002/admi.202400567

Publikācijas valoda
English (en)
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