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Publikācija: Nanohills in SiGe/Si Structure Formed by Laser Radiation

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Nosaukums oriģinālvalodā Nanohills in SiGe/Si Structure Formed by Laser Radiation
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori Artūrs Medvids
Pāvels Onufrijevs
Klara Lyutovich
Erich Kasper
Igor Dmitruk
Iryna Pundyk
Ivan Manak
Dainis Grabovskis
Atslēgas vārdi nanohills, SiGe, laser, hetero-epitaxial structure
Anotācija Formation of self-assembling nanohills induced by irra- diation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2 . The giant "blue shift" of photoluminescence spectra with maximum intensity in re- gion of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maxi- mum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm(-1) Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is ex- plained by localization of Ge atoms drifting toward the irra- diated surface under the thermal gradient due to strong ab- sorption of laser radiation.
Hipersaite: http://www.jamris.org/images/ISSUES/ISSUE-2009-04/016%20JAMRIS%20No12%20-%20Medvid.pdf 
Atsauce Medvids, A., Onufrijevs, P., Lyutovich, K., Kasper, E., Dmitruk, I., Pundyk, I., Manak, I., Grabovskis, D. Nanohills in SiGe/Si Structure Formed by Laser Radiation. Journal of Automation, Mobile Robotics & Intelligent Systems, 2009, Vol.3, No.4, 62.-64.lpp. e-ISSN 2080-2145. ISSN 1897-8649.
ID 6309