Nanohills in SiGe/Si Structure Formed by Laser Radiation
Journal of Automation, Mobile Robotics & Intelligent Systems 2009
Artūrs Medvids, Pāvels Onufrijevs, Klara Lyutovich, Erich Kasper, Igor Dmitruk, Iryna Pundyk, Ivan Manak, Dainis Grabovskis

Formation of self-assembling nanohills induced by irra- diation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2 . The giant "blue shift" of photoluminescence spectra with maximum intensity in re- gion of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maxi- mum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm(-1) Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is ex- plained by localization of Ge atoms drifting toward the irra- diated surface under the thermal gradient due to strong ab- sorption of laser radiation.

Atslēgas vārdi
nanohills, SiGe, laser, hetero-epitaxial structure

Medvids, A., Onufrijevs, P., Lyutovich, K., Kasper, E., Dmitruk, I., Pundyk, I., Manak, I., Grabovskis, D. Nanohills in SiGe/Si Structure Formed by Laser Radiation. Journal of Automation, Mobile Robotics & Intelligent Systems, 2009, Vol.3, No.4, 62.-64.lpp. e-ISSN 2080-2145. ISSN 1897-8649.

Publikācijas valoda
English (en)
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